1. Product Science and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms organized in a tetrahedral latticework, primarily in hexagonal (4H, 6H) or cubic (3C) polytypes, each showing outstanding atomic bond toughness.
The Si– C bond, with a bond energy of around 318 kJ/mol, is among the toughest in architectural ceramics, giving outstanding thermal security, solidity, and resistance to chemical attack.
This durable covalent network leads to a product with a melting factor surpassing 2700 ° C(sublimes), making it one of the most refractory non-oxide porcelains offered for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC preserves mechanical strength and creep resistance at temperatures above 1400 ° C, where lots of steels and standard ceramics begin to soften or degrade.
Its reduced coefficient of thermal expansion (~ 4.0 × 10 ⁻⁶/ K) incorporated with high thermal conductivity (80– 120 W/(m · K)) makes it possible for quick thermal biking without tragic splitting, an important feature for crucible performance.
These intrinsic homes come from the well balanced electronegativity and similar atomic dimensions of silicon and carbon, which advertise an extremely stable and largely packed crystal structure.
1.2 Microstructure and Mechanical Resilience
Silicon carbide crucibles are commonly produced from sintered or reaction-bonded SiC powders, with microstructure playing a crucial role in resilience and thermal shock resistance.
Sintered SiC crucibles are produced through solid-state or liquid-phase sintering at temperatures above 2000 ° C, typically with boron or carbon additives to boost densification and grain boundary communication.
This procedure yields a completely thick, fine-grained framework with marginal porosity (
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