Advanced energy materials: high electron affinity for fast hole extraction and preparation of high efficiency flexible perovskite solar cells

In the ten years since 2009 the photoelectric conversion efficiency of perovskite solar cells has increased rapidly reaching the latest certified world record of 25.2% close to the highest value of monocrystalline silicon solar cells. The unique semiconductor properties of perovskite make it possible to prepare photovoltaic devices with conventional formal or trans structure. Among them the low-temperature preparation of trans perovskite solar cells has been widely concerned because of its good stability simple preparation process good compatibility with flexible laminated solar cells. However the development of trans perovskite solar cells still lags behind the formal devices especially the low open circuit voltage (VOC) fill factor (FF) which is mainly due to the non radiative recombination loss of the hole transport material / perovskite interface caused by the poor hole extraction ability of the hole transport layer.

the Halley yuan team of School of materials science engineering Shanghai Jiaotong University / State Key Laboratory of metal matrix composites studied the effect of electron affinity on the properties of hole transport materials. In particular 36-difluoro-25 - 7 - 7 - 8 - 8-hexacyanoquinoline dimethyl (f2hcnq) molecule was first used to improve the performance of the hole transport layer. The conductivity of the hole transport layer was increased by 10 times the energy gap between Fermi level valence b was reduced from 0.60 ev to 0.24 ev Therefore the hole extraction ability is increased about 5 times. This makes the small area trans perovskite solar cells based on rigid flexible substrates achieve the highest photoelectric conversion efficiency of 22.13% 20.01% respectively the photoelectric conversion efficiency of large area flexible module (36.1cm2) reaches 12.4%. It provides a low-cost high-performance strategy for the future.

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